InGaAs SWIR Detectors (Sensors) Market Summary

Short wave infrared detectors have important application value and prospects in fields such as space remote sensing, night vision, and temperature measurement. Currently, in addition to using traditional tellurium cadmium mercury and antimonide infrared materials, indium gallium arsenic (InGaAs) material is considered an excellent material for making short wave infrared detectors. The cutoff wavelength of short wave infrared detectors made using it is about 1.7 μ m. It has advantages such as high absorption coefficient, high mobility, and high detection rate.

According to the new market research report “Global InGaAs SWIR Detectors (Sensors) Market Report 2024-2030”, published by QYResearch, the global InGaAs SWIR Detectors (Sensors) market size is projected to reach USD 0.38 billion by 2030, at a CAGR of 7.3% during the forecast period.

According to QYResearch Top Players Research Center, the global key manufacturers of InGaAs SWIR Detectors (Sensors) include Hamamatsu, SCD, CETC (NO.44 Institute), Lynred, I3system, Teledyne Technologies, ZKDX, Sensors Unlimited, NORINCO GROUP (Kunming Institute of Physics), Sony, etc. In 2023, the global top 10 players had a share approximately 64.1% in terms of revenue.

 

 

In terms of product application, currently Single-Element InGaAs SWIR Sensors is the largest segment, hold a share of 34.5%.

 

Market Drivers:

The penetration rate of civilian infrared detectors continues to increase: The 14th Five-Year Plan clearly proposes to accelerate the intelligent transformation of power grid infrastructure and the construction of smart microgrids, and improve the complementary and intelligent adjustment capabilities of the power system. Intelligence means all-weather and unmanned. The infrared thermal imaging system is an important component of the intelligentization of power grid infrastructure, and its demand is increasing with the increase in national smart grid investment.

Broad downstream application prospects: Detectors in the short-wave infrared band have important application value and prospects in the fields of space remote sensing, night vision, temperature measurement, etc. In addition to using traditional mercury cadmium telluride and antimonide infrared materials, detectors in this band range Indium gallium arsenic (InGaAs) material is considered to be an excellent material for making short-wave infrared detectors. The short-wave infrared detector made with it has a cut-off wavelength of about 1.7 μm and has the advantages of high absorption coefficient, high mobility and high detection rate.

Policy support: my country has issued a series of policies to support the development of the infrared detector industry. Infrared detector technology covers integrated circuits, MEMS sensors, electronic circuits, signal processing, image processing and other fields, involving microelectronics, materials, machinery, thermal, The development of infrared detector technology in multi-disciplinary fields such as optics has enabled my country to get rid of the long-term situation of being subject to foreign technology monopoly. In the future, it will achieve great and sustained development with the attention and support of the country.

 

Restraint:

Raw material price fluctuation

Competition from Low-end InGaAs SWIR Detectors (Sensors) manufacturers is bad for industrial upgrading

Lack of support from upstream/downstream partners as a new entry to the market

 

 

 

 

 

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