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Download Philips Semiconductors (Acquired by NXP) BF495 pdf datasheet file. Philips Semiconductors (Acquired by NXP) BF495 datasheet. If it's not shown correctly, Click here to open the file on a separate window. PDF. BF495C. USHA. ic (mA) = 30 VCBO(V) = 30 VCEO(V) = 20. Original. PDF. BF495C. Continental Device India. Metal Can and Epoxy Transistors. Scan. PDF. BF495C. Continental Device India. Semiconductor Device Data Book 1996. Scan. Datasheet: BF495 (Continental Device India). Npn silicon planar epitaxial rf transistors. Скачать: PDF ZIP. BF494 BF495. TO-92 Plastic Package. ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Specified Otherwise) DESCRIPTION. MAX. UNIT V CBO collector-base voltage open emitter 30 V V CEO collector-emitter voltage open base 20 V I CM peak collector current 30 ma P tot total power dissipation T amb 25 C 300 mw h FE DC current gain I C = 1 ma; V CE =10V BF BF f T transition frequency I C = 1 ma; V CE = 10.
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